China made new progress in the study of broad-spectrum luminescence of silicon nanowire arrays
Recently, the group of SOI materials and devices, State Key Laboratory of Functional Materials for Information Systems, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CASS) made new progress in broad-spectrum luminescence of silicon nanowire arrays. The research team combined SOI with surface plasmonics to study the luminescent properties of silicon nanowire arrays and worked with Fudan University to calculate the luminescence peaks of nanowires and nanowires based on the FDTD theory The corresponding relationship between resonance modes has laid the foundation of experiment and theory for the realization of silicon-based optoelectronic integration, contributing to the large-scale application of silicon-based light sources. Relevant research results are in the recent issue of Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength, Nano Lett., 2017, 17 (3), pp1552-1558.
As the most important cornerstone of the microelectronics industry, Si plays a crucial role in the development of integrated circuits. However, as device sizes become smaller and smaller, the problem of signal delay and device overheating caused by overly high interconnection and integration leads to a great increase in the sustainable development of the microelectronics industry represented by large scale integrated circuits Challenges, and silicon-based optoelectronics integration is the ideal way to solve this problem. However, the integration of two very different technologies (electronics and photonics) on the same piece of silicon, the biggest challenge is the light source. For the light-emitting devices, a large number of studies have focused on direct bandgap semiconductors such as GaAs and InGaAs. But so far to achieve III-V and other direct bandgap semiconductor materials and silicon-based integration there is still a huge obstacle. However, due to its indirect band gap structure, silicon can not emit light effectively because of its extremely low luminous efficiency. SOI Task Group mother Zhiqiang, Di Zengfeng, Wang Xi and other researchers will SOI technology and surface plasmon polariton technology by processing the silicon nanowires into a trapezoidal-like structure, to achieve a ladder-like structure of nano-cavity enhanced silicon The luminescence of nanowire arrays is enhanced. By comparing the experimental results with the FDTD results, the one-to-one correspondence between the luminescence peak of the nanowire arrays and the resonant modes of nanocavities was found. And by preparing the graded silicon nanowire arrays, the luminescent peak positions of the silicon nanowire arrays are continuously adjustable in the visible and near-infrared regions. This not only opens up a new way for silicon-based light sources, but also will promote the development of silicon-based optoelectronics.
The work was supported by the National Natural Science Foundation of innovative research groups, outstanding youth fund, Chinese Academy of high mobility material innovation research team and other related research programs.
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